US1J R3G

Mfr.Part #
US1J R3G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 600V 1A DO214AC
Manufacturer :
Taiwan Semiconductor
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AC, SMA
Part Status :
Discontinued at Digi-Key
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AC (SMA)
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 1 A
Datasheets
US1J R3G

Manufacturer related products

  • Taiwan Semiconductor
    TVS DIODE 36VWM 58.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 33VWM 53.3VC SMC
  • Taiwan Semiconductor
    TVS DIODE 54VWM 87.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 26VWM 42.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 12VWM 19.9VC SMC

Catalog related products

Related products

Part Manufacturer Stock Description
US1J DComponents 24,727,500 UF Rect, 600V, 1.00A, 75ns
US1J M2G Taiwan Semiconductor 1,000 DIODE GEN PURP 600V 1A DO214AC
US1J-13 Diodes Incorporated 1,000 DIODE GEN PURP 600V 1A SMA
US1J-13-F Diodes Incorporated 156,693 DIODE GEN PURP 600V 1A SMA
US1J-AQ Diotec Semiconductor 7,500 DIODE UFR SMA 600V 1A
US1J-AQ DComponents 1,000 UF Rect, 600V, 1.00A, 75ns
US1J-E3/5AT Vishay 1,000 DIODE GEN PURP 600V 1A DO214AC
US1J-E3/61T Vishay 1,000 DIODE GEN PURP 600V 1A DO214AC
US1J-E3S/61T Vishay 1,000 DIODE GEN PURP 600V
US1J-HF Comchip Technology 1,000 RECTIFIER ULTRA FAST RECOVERY 60
US1J-M3/5AT Vishay 1,000 DIODE GEN PURP 600V 1A DO214AC
US1J-M3/61T Vishay 1,000 DIODE GEN PURP 600V 1A DO214AC
US1J-M3S/61T Vishay 1,000 DIODE GEN PURP 600V
US1J-TP Micro Commercial Components (MCC) 5,000 DIODE GEN PURP 600V 1A DO214AC
US1J/1 Vishay 1,000 DIODE GEN PURP 600V 1A DO214AC