ES2F R5G
- Mfr.Part #
- ES2F R5G
- Manufacturer
- Taiwan Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- DIODE GEN PURP 300V 2A DO214AA
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 20pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 2A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 300 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AA, SMB
- Part Status :
- Discontinued at Digi-Key
- Reverse Recovery Time (trr) :
- 35 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AA (SMB)
- Voltage - DC Reverse (Vr) (Max) :
- 300 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3 V @ 2 A
- Datasheets
- ES2F R5G
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
ES2F | Diotec Semiconductor | 3,000 | DIODE SFR SMB 300V 2A |
ES2F | DComponents | 1,000 | SF Rect, 300V, 2.00A, 25ns |
ES2F M4G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2F-E3/52T | Vishay | 12,493 | DIODE GEN PURP 300V 2A DO214AA |
ES2F-E3/5BT | Vishay | 9,617 | DIODE GEN PURP 300V 2A DO214AA |
ES2F-M3/52T | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2F-M3/5BT | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2FA M2G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 300V 2A DO214AC |
ES2FA R3G | Taiwan Semiconductor | 1,069 | DIODE GEN PURP 300V 2A DO214AC |
ES2FAHM2G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 300V 2A DO214AC |
ES2FAHR3G | Taiwan Semiconductor | 1,852 | DIODE GEN PURP 300V 2A DO214AC |
ES2FHE3/52T | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2FHE3/5BT | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2FHE3_A/H | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |
ES2FHE3_A/I | Vishay | 1,000 | DIODE GEN PURP 300V 2A DO214AA |