
ES3J R6G
- Mfr.Part #
- ES3J R6G
- Manufacturer
- Taiwan Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- DIODE SCHOTTKY DO214AB
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 30pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Part Status :
- Discontinued at Digi-Key
- Reverse Recovery Time (trr) :
- 35 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 3 A
- Datasheets
- ES3J R6G
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
ES3J | onsemi | 1,000 | DIODE GEN PURP 600V 3A SMC |
ES3J | DComponents | 1,000 | SF Rect, 600V, 3.00A, 35ns |
ES3J | SURGE | 1,000 | 3A -600V - SMC (DO-214AB) - RECT |
ES3J | SMC Diode Solutions | 1,000 | SMT SUPER FAST RECTIFIER |
ES3J M6 | Taiwan Semiconductor | 1,000 | DIODE SCHOTTKY DO214AB |
ES3J M6G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 600V 3A DO214AB |
ES3J R6 | Taiwan Semiconductor | 1,000 | DIODE SCHOTTKY DO214AB |
ES3J R7 | Taiwan Semiconductor | 1,000 | DIODE SCHOTTKY DO214AB |
ES3J R7G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 600V 3A DO214AB |
ES3J V6G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 600V 3A DO214AB |
ES3J V7G | Taiwan Semiconductor | 410 | DIODE GEN PURP 600V 3A DO214AB |
ES3J-F1-3000HF | YANGJIE | 1,000 | DIODE GEN PURP 600V 3A DO214AB |
ES3JB | SURGE | 1,000 | 3A -600V - SMB (DO-214AA) - RECT |
ES3JB M4G | Taiwan Semiconductor | 1,000 | DIODE GEN PURP 600V 3A DO214AA |
ES3JB R5G | Taiwan Semiconductor | 155 | DIODE GEN PURP 600V 3A DO214AA |