1N821A

Mfr.Part #
1N821A
Manufacturer
NTE Electronics, Inc.
Package/Case
-
Datasheet
Download
Description
DIODE ZENER 6.2V 400MW DO35
Manufacturer :
NTE Electronics, Inc.
Product Category :
Diodes - Zener - Single
Current - Reverse Leakage @ Vr :
-
Impedance (Max) (Zzt) :
15 Ohms
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
DO-204AH, DO-35, Axial
Part Status :
Active
Power - Max :
400 mW
Supplier Device Package :
DO-35
Tolerance :
±5%
Voltage - Forward (Vf) (Max) @ If :
-
Voltage - Zener (Nom) (Vz) :
6.2 V
Datasheets
1N821A

Manufacturer related products

  • NTE Electronics, Inc.
    BUZZER 240V 32.51X26.92 PNL MNT
  • NTE Electronics, Inc.
    BUZZER 24V 32.51X26.92MM PNL MNT
  • NTE Electronics, Inc.
    BUZZER 120V 32.51X26.92 PNL MNT
  • NTE Electronics, Inc.
    BUZZER 12V 32.51X26.92MM PNL MNT
  • NTE Electronics, Inc.
    BATT CHG USB PWR PK 4.8-5.25V 1A

Catalog related products

Related products

Part Manufacturer Stock Description
1N821 Microchip Technology 1,000 DIODE ZENER DO35
1N821-1 Microchip Technology 411 DIODE ZENER 6.2V 500MW DO35
1N821-1/TR Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED
1N821-1E3 Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED
1N821-1E3/TR Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED
1N821/TR Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED
1N821A Microchip Technology 730 DIODE ZENER 6.2V 500MW DO35
1N821A Solid State Inc. 5,000 DIODE ZENER 6.2V 400MW DO35
1N821A (DO35) Microchip Technology 1,000 DIODE ZENER 6.2V 500MW DO35
1N821A BK Central Semiconductor 1,000 TRANSISTOR
1N821A TR Central Semiconductor 1,000 TRANSISTOR
1N821A, SEL. 1% VBR Microchip Technology 1,000 DIODE ZENER 6.2V 500MW DO35
1N821A-1 Microchip Technology 1,000 ZENER DIODE
1N821A-1/TR Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED
1N821A-1E3 Microchip Technology 1,000 DIODE ZENER TEMP COMPENSATED