HN1B04FE-Y,LF

Mfr.Part #
HN1B04FE-Y,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
Download
Description
TRANS NPN/PNP 50V 0.15A ES6
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Current - Collector (Ic) (Max) :
150mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA, 6V
Frequency - Transition :
80MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-563, SOT-666
Part Status :
Active
Power - Max :
100mW
Supplier Device Package :
ES6
Transistor Type :
NPN, PNP
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheets
HN1B04FE-Y,LF

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