2SA2013-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA, 2V

Frequency - Transition :

400MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Part Status :

Active

Power - Max :

3.5 W

Supplier Device Package :

PCP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

340mV @ 100mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

50 V