2N5550/D26Z
- Mfr.Part #
- 2N5550/D26Z
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- NPN EPITAXIAL SILICON TRANSISTOR
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 600 mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA, 5V
- Frequency - Transition :
- 300MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Part Status :
- Active
- Power - Max :
- 625 mW
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 140 V
- Datasheets
- 2N5550/D26Z
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