2SA1013-O,T6MIBF(J

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 200mA, 5V

Frequency - Transition :

50MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Part Status :

Obsolete

Power - Max :

900 mW

Supplier Device Package :

TO-92L

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

160 V