RN1404S,LF

Mfr.Part #
RN1404S,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
Download
Description
TRANS PREBIAS NPN 50V 0.1A SMINI
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Frequency - Transition :
250 MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Part Status :
Active
Power - Max :
200 mW
Resistor - Base (R1) :
47 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
Supplier Device Package :
S-Mini
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datasheets
RN1404S,LF

Manufacturer related products

  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 15VC CST2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 24VC SL2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 5VWM ESV PAC
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE USM
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.5VWM ESV

Catalog related products

  • ROHM Semiconductor
    TRANS PREBIAS PNP 200MW SMT3
  • Toshiba Electronic Devices and Storage Corporation
    TRANS PREBIAS NPN 50V 0.1A SMINI
  • ROHM Semiconductor
    TRANS PREBIAS PNP 200MW SMT3
  • ROHM Semiconductor
    TRANS PREBIAS PNP 200MW SMT3
  • ROHM Semiconductor
    TRANS PREBIAS PNP 200MW SMT3

Related products

Part Manufacturer Stock Description
RN1401,LF Toshiba Electronic Devices and Storage Corporation 308 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1401,LXHF Toshiba Electronic Devices and Storage Corporation 1,000 AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
RN1402,LF Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1402,LXHF Toshiba Electronic Devices and Storage Corporation 2,640 AUTO AEC-Q SINGLE NPN Q1BSR=10K,
RN1402S,LF Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1403,LF Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1403,LXHF Toshiba Electronic Devices and Storage Corporation 1,000 AUTO AEC-Q SINGLE NPN Q1BSR=22K,
RN1404,LF Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1404,LXHF Toshiba Electronic Devices and Storage Corporation 1,000 AUTO AEC-Q SINGLE NPN Q1BSR=47K,
RN1405,LF Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1405,LXHF Toshiba Electronic Devices and Storage Corporation 1,000 AUTO AEC-Q SINGLE NPN Q1BSR=2.2K
RN1406,LF Toshiba Electronic Devices and Storage Corporation 133 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1406,LXHF Toshiba Electronic Devices and Storage Corporation 1,000 AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
RN1406S,LF(D Toshiba Electronic Devices and Storage Corporation 1,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1407,LF Toshiba Electronic Devices and Storage Corporation 7,244 TRANS PREBIAS NPN 50V 0.1A SMINI