FDMQ8403

Mfr.Part #
FDMQ8403
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
3.1A
Drain to Source Voltage (Vdss) :
100V
FET Feature :
Standard
FET Type :
4 N-Channel (H-Bridge)
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
215pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
12-WDFN Exposed Pad
Part Status :
Active
Power - Max :
1.9W
Rds On (Max) @ Id, Vgs :
110mOhm @ 3A, 10V
Supplier Device Package :
12-MLP (5x4.5)
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FDMQ8403

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