SI4816BDY-T1-GE3

Mfr.Part #
SI4816BDY-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
Download
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC
Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
5.8A, 8.2A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
1W, 1.25W
Rds On (Max) @ Id, Vgs :
18.5mOhm @ 6.8A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
3V @ 250µA
Datasheets
SI4816BDY-T1-GE3

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