TW070J120B,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

36A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

Standard

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

67 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

1680 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C

Package / Case :

TO-3P-3, SC-65-3

Part Status :

Active

Power Dissipation (Max) :

272W (Tc)

Rds On (Max) @ Id, Vgs :

90mOhm @ 18A, 20V

Supplier Device Package :

TO-3P(N)

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

±25V, -10V

Vgs(th) (Max) @ Id :

5.8V @ 20mA