IRL100HS121

Mfr.Part #
IRL100HS121
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 100V 11A 6PQFN
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
440 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
6-PowerVDFN
Part Status :
Active
Power Dissipation (Max) :
11.5W (Tc)
Rds On (Max) @ Id, Vgs :
42mOhm @ 6.7A, 10V
Supplier Device Package :
6-PQFN Dual (2x2)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.3V @ 10µA
Datasheets
IRL100HS121

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