RFM25N06

Mfr.Part #
RFM25N06
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
1700 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-204AA, TO-3
Part Status :
Active
Power Dissipation (Max) :
100W (Tc)
Rds On (Max) @ Id, Vgs :
70mOhm @ 12.5A, 10V
Supplier Device Package :
TO-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
RFM25N06

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