NP23N06YDG-E1-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

23A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1800 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

8-SMD, Flat Lead Exposed Pad

Part Status :

Active

Power Dissipation (Max) :

1W (Ta), 60W (Tc)

Rds On (Max) @ Id, Vgs :

27mOhm @ 11.5A, 10V

Supplier Device Package :

8-HSON

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA