SPU01N60C3BKMA1

Mfr.Part #
SPU01N60C3BKMA1
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 650V 800MA TO251-3
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
800mA (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
100 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Part Status :
Obsolete
Power Dissipation (Max) :
11W (Tc)
Rds On (Max) @ Id, Vgs :
6Ohm @ 500mA, 10V
Supplier Device Package :
PG-TO251-3-21
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.9V @ 250µA
Datasheets
SPU01N60C3BKMA1

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