3N187

Mfr.Part #
3N187
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Manufacturer :
Rochester Electronics
Product Category :
Transistors - JFETs
Current - Drain (Idss) @ Vds (Vgs=0) :
5 mA @ 15 V
Current Drain (Id) - Max :
-
Drain to Source Voltage (Vdss) :
20 V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8.5pF @ 15V
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 175°C (TJ)
Package / Case :
TO-206AF, TO-72-4 Metal Can
Part Status :
Active
Power - Max :
330 mW
Resistance - RDS(On) :
-
Supplier Device Package :
TO-72
Voltage - Breakdown (V(BR)GSS) :
6.5 V
Voltage - Cutoff (VGS off) @ Id :
500 mV @ 50 µA
Datasheets
3N187

Manufacturer related products

Catalog related products

  • NTE Electronics, Inc.
    JFET-P CHAN GEN PURP AMP
  • NTE Electronics, Inc.
    JFET-P-CH GEN PURP AF AMP
  • NTE Electronics, Inc.
    JFET-N-CH CHOPPER/SW
  • UnitedSiC
    1200V/65MOHM, SIC, N-ON JFET, G3
  • onsemi
    JFET P-CH 30V 0.225W SOT23

Related products